Plasma treatment apparatus

Electric heating – Metal heating – By arc

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Details

21912142, 156345, 20429816, 20429837, 20429838, B23K 1000, H01L 2100

Patent

active

053998308

ABSTRACT:
An electromagnetic coil and the microwave generating source are provided so that the ECR discharge occurs to the reactive gas within the reaction chamber by generating a magnetic field in the reaction chamber and by introducing the microwave into it, for generating plasma. The sample table for placing the wafer is installed within the reaction chamber, on which wafer treatment like etching is effected by the plasma generated within the reaction chamber. The reaction chamber includes a first portion and a second portion which is insulated from the first portion by an insulating portion. The first portion and the second portion are structured so that the potential difference is applied by way of the power supply.

REFERENCES:
patent: 4574179 (1986-03-01), Masuzawa et al.
patent: 5133825 (1992-07-01), Hakamata et al.
patent: 5168197 (1992-12-01), Tamba et al.
patent: 5279669 (1994-01-01), Lee
patent: 5290993 (1994-03-01), Kaji et al.

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