Liquid crystal programmable photoresist exposure method for maki

Details Liquid crystal programmable photoresist exposure method for maki Liquid crystal programmable photoresist exposure method for maki

1990-12-17

1992-01-21

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430394, 430 20, 430 22, 430311, G03F 900

Patent

active

050827553

ABSTRACT:
Photoresist layers are rapidly exposed in a pattern determined by electronically stored data by exposure of the photoresist through a high resolution liquid crystal shutter array.

REFERENCES:
patent: 4610940 (1986-09-01), Araihara

Affiliated with

Also associated with

Rating

Liquid crystal programmable photoresist exposure method for maki does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Liquid crystal programmable photoresist exposure method for maki, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Liquid crystal programmable photoresist exposure method for maki will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-114974