Method of forming interconnection structure to prevent outgassin

Details Method of forming interconnection structure to prevent outgassin Method of forming interconnection structure to prevent outgassin

1993-06-18

1995-03-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437190, H01L 2144

Patent

active

053995309

ABSTRACT:
The disclosure relates to a method of forming an interconnection structure. In the method, firstly, a SOG layer is deposited on a first aluminum conductive layer which is formed on a substrate. Then, a through-hole is formed by opening the SOG layer so as to expose two opposed surfaces of the SOG layer and an upper surface of the first conductive layer. Then, the substrate, the first conductive layer and the SOG layer are heated at a first temperature ranging from 450.degree. to 550.degree. C. Then, a titanium layer is formed on the through-hole so as to mask the two opposed surfaces of the SOG layer. Then, a second aluminum conductive layer is deposited on the SOG layer by sputtering so as to fill the through-hole with the second conductive layer. During the sputtering of the second conductive layer, the release of water vapor from the SOG layer is suppressed, thereby obtaining an interconnection structure having a good contact.

REFERENCES:
patent: 4755480 (1988-07-01), Yau et al.
patent: 5081064 (1992-01-01), Inoue et al.
Wolf, Silicon Processing for the VLSI Era, vol. 2, Lattic Press, Sunset Beach, Calif., 1990, pp. 229-236, 280-281.
Tompkins et al., "Desorption from Spin-On Glass," J. Electrochem. Soc., vol. 136, No. 8, Aug. 1989, pp. 2331-2335.
Nishida et al., "Multilevel Interconnection for Half-Micron ULSI's," VMIC Conference, 1989 IEEE, Jun. 12-13, 1989, pp. 19-25.
J. L. Vossen, "A Sputtering Technique for Coating the Inside Walls of Through-Holes in Substrates", J. Vac. Sci. Technol., vol. 11, No. 5, Sep./Oct. 1974, pp. 875-877

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