Patent
1989-01-05
1991-02-19
Hille, Rolf
357 68, 357 65, H01L 2348
Patent
active
049948946
ABSTRACT:
A semiconductor device comprises a semiconductor substrate having a diffused region and an element region, and the diffused region and the element region overlap at least partially. An insulating layer having a contact hole is provided at the surface of the substrate. A wiring layer crosses over the contact hole to form at least four crossing points with respect to the contact hole. The crossing points over the element region correspond to the overlap between the diffused region and the element region.
REFERENCES:
patent: 4549199 (1985-10-01), Yamauchi et al.
Fahmy Wael
Hille Rolf
Kabushiki Kaisha Toshiba
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