Composite MOS transistor and application to a free-wheel diode

Details Composite MOS transistor and application to a free-wheel diode Composite MOS transistor and application to a free-wheel diode

1989-08-30

1991-02-19

Hille, Rolf

357 39, 357 42, 357 234, H01L 29747, H01L 2910, H01L 2702

Patent

active

049948865

ABSTRACT:
A composite MOS transistor in a substrate of a first conductivity type comprises a gate electrode (G1), a first main electrode (A1) and a second main electrode (A2) in a substrate area (60). An auxiliary switch comprising MOS transistors (52, 53) in the substrate area, selectively provides a low impedance path between the substrate area and the lowest potential of the first and second main electrodes.

REFERENCES:
patent: 4551779 (1985-11-01), Murakami et al.
H. Matino; High voltage V-MosFet; Jul. 1977 IBM Technical Disclosure Bulletin; pp. 643-644.
Elektronik, vol. 37, No. 2, pp. 86-87, "Abschied von Externen Dioden".

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