Local interconnect for stacked polysilicon device

Details Local interconnect for stacked polysilicon device Local interconnect for stacked polysilicon device

1989-12-26

1991-02-19

Hille, Rolf

357 236, 357 234, H01L 2910, H01L 2968

Patent

active

049948733

ABSTRACT:
A semiconductor device is formed in an active region of a substrate. The device has first and second polysilicon strips which are aligned. The first polysilicon strip is somewhat wider than the second. A contact is formed between the second polysilicon strip and a region in the active region. The contact is ensured of not shorting to the first polysilicon strip by the use of an extra sidewall spacer. One sidewall is already present but is etched down to expose the second polysilicon strip. The etching down of the one sidewall spacer may also expose a corner of the first polysilicon strip. The extra sidewall spacer covers the potentially exposed corner. The first polysilicon strip can also have a neck portion protruding toward the second polysilicon strip and aligned with the second polysilicon strip. This further improves the margin by which the contact will avoid the corner of the first polysilicon strip.

REFERENCES:
patent: 4698659 (1987-10-01), Mizutani

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