Insulated gate static induction transistor and integrated circui

Details Insulated gate static induction transistor and integrated circui Insulated gate static induction transistor and integrated circui

1988-07-29

1991-02-19

Hille, Rolf

357 233, 357 24, 357 22, 357 43, H01L 2910

Patent

active

049948725

ABSTRACT:
An insulated-gate static induction transistor is formed by establishing a potential barrier in a semiconductor region of one conductivity type between the source and the drain regions of the other conductivity type. The height of the potential barrier should be sensitive to the drain voltage as well as to the gate voltage. Therefore, the semiconductor region should have a low impurity concentration and short length. The potential barrier can be established by varying the field effect of the gate voltage in the semiconductor region and/or by the built-in potential between the source region and the semiconductor region.

REFERENCES:
patent: 4317127 (1982-02-01), Nishizawa
patent: 4814843 (1989-03-01), Nishizawa

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