Method for determining impurities in epitaxial silicon crystals

Details Method for determining impurities in epitaxial silicon crystals Method for determining impurities in epitaxial silicon crystals

1982-08-17

1985-01-08

Smith, Alfred E.

Radiant energy

Luminophor irradiation

Methods

2504922, 2504841, G01N 2164

Patent

active

044928718

ABSTRACT:
A laser beam is directed onto an epitaxial silicon crystal grown on a silicon crystal substrate at the temperature of liquid helium and the spectra of the luminescent light radiated from the crystal and the substrate are analyzed to determine the kind and concentration of impurities in the epitaxial silicon crystal. In particular, a photo luminescence intensity ratio of an impurity within the crystal substrate and an impurity within the epitaxial crystal is graphically related to the concentration of the impurity within the epitaxial crystal such that the concentration levels of the impurity within the epitaxial crystal may be determined as a function of the photo luminescence intensity ratio.

REFERENCES:
Merz, "Photoluminescence of Oxygen in ZnTe Introduced by Ion Implantation", App. Phys. Letters, 15 (5), Sep. 1, 1969, pp. 129-131.
White, "Applications of Photoluminescence Excitation Spectroscopy to the Study of Indium Gallium Phosphide Alloys," J. Phys. D: App. Phys., 3, 1970, pp. 1322-1328.

Affiliated with

Also associated with

Rating

Method for determining impurities in epitaxial silicon crystals does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for determining impurities in epitaxial silicon crystals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for determining impurities in epitaxial silicon crystals will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-114547