Infrared radiation sensor

Radiant energy – Invisible radiant energy responsive electric signalling – Infrared responsive

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25037014, G01J 520

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active

055896880

ABSTRACT:
An infrared radiation sensor of high accuracy is provided which is suitable for a thermometer to be used for effecting noncontacting determination of a temperature of a subject under test, particularly a temperature of a tympanic membrane, by utilizing the temperature characteristics of the saturated current flowing in the reverse direction through a Schottky junction diode. The infrared radiation sensor comprises an n type single crystal area 2 formed in the shape of a thin film by doping a sensor substrate 8 made of p type semiconductor with an n type impurity through the surface of the sensor substrate, a temperature sensor element 1 formed in the n type single crystal area 2, a hollow part 6 formed by removing by electrochemically etching the p type semiconductor from the substantially lower and peripheral parts of the n type single crystal area 2, and a thermally and electrically insulating thin film bridge structure having the n type single crystal area 2 in the shape of a thin film provided with the temperature sensor element 1 carried thereon.

REFERENCES:
patent: 5397897 (1995-03-01), Komatsu et al.
Patent Abstracts of Japan, vol. 016, No. 505 (E-1281), 19 Oct. 1992 & JP-A-04 186833 (Fuji Electric Co Ltd.), 3 Jul. 1992. (English abstract.)
Patent Abstracts of Japan, vol. 017, No. 329 (P-1561), 22 Jun. 1993 & JP-A-05 040064 (Mitsuteru Kimura), 19 Feb. 1993. (English abstract.)
Patent Abstracts of Japan, vol. 017, No. 522 (P-1616), 20 Sep. 1993 & JP-A-05 142039 (Hamamatsu Photonics KK), 8 Jun. 1993. (English abstract.)
M. Suzuki et al., "An Infrared Detector Using Poly-Silicon p-n Junction Diode", Technical Digest of the 9th Sensor Symposium, 1990, pp. 71-74.

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