Radiation hardened field oxides for NMOS and CMOS-bulk and proce

Details Radiation hardened field oxides for NMOS and CMOS-bulk and proce Radiation hardened field oxides for NMOS and CMOS-bulk and proce

1988-09-20

1991-02-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437968, 437 67, 437228, H01L 21265

Patent

active

049944070

ABSTRACT:
The field oxide surrounding an NMOS device or the field oxide around the NMOS device and between the NMOS and PMOS devices in CMOS is split or notched to make at least one thin field oxide region under which a degenerative P+ region is formed in the substrate to increase threshold voltages of the undesired field oxide FET.

REFERENCES:
patent: 3751722 (1973-08-01), Richman
patent: 4403395 (1983-09-01), Curran
patent: 4454647 (1984-06-01), Joy et al.
patent: 4462847 (1984-07-01), Thompson
patent: 4519128 (1985-05-01), Chesebro
patent: 4528047 (1985-07-01), Beyer
patent: 4534826 (1985-08-01), Goth
patent: 4679304 (1987-07-01), Bois
patent: 4839115 (1989-05-01), Eklund

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