Method of gettering heavy-metal impurities from silicon substrat

Fishing – trapping – and vermin destroying

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437 10, 437173, 148DIG60, 148DIG61, H01L 21322

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active

049943995

ABSTRACT:
A method of gettering heavy metal impurities from p-type silicon substrates comprises the prior step of forming an intrinsic gettering layer covered with a surface denuded zone in the silicon substrate by subjecting the substrate to heat treatments which form the intrinsic gettering layer having a large density of crystal microdefects compared to the density of crystal microdefects in the denuded zone; then the step of performing most of the required wafer processes other than the step of forming a metal layer; and subsequently the gettering step of heating the silicon substrate to a predetermined temperature and simultaneously irradiating the substrate with light rays, the predetermined temperature being selected to be within the temperature range 150.degree. C. to 220.degree. C., preferably around 200.degree. C.

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