Method of making a semiconductor device having a charge transfer

Details Method of making a semiconductor device having a charge transfer Method of making a semiconductor device having a charge transfer

1992-11-17

1993-11-09

Thomas, Tom

Fishing, trapping, and vermin destroying

437 59, H01L 2170

Patent

active

052602281

ABSTRACT:
A semiconductor device having a semiconductor substrate of a first conductivity type, an epitaxial layer of a second conductivity type formed on a major surface of the semiconductor substrate, an isolation layer of the first conductivity type formed in the epitaxial layer and extending from a surface thereof to the major surface of the semiconductor substrate. The isolation layer divides the epitaxial layer into first, second, and third islands. The device further has two wells of the first conductivity type, formed in the first and second islands, respectively, and extending to the substrate, a charge transfer device having a back gate formed of the first well, an insulated-gate FET of the first conductivity type, having a back gate formed of the second island, an insulated-gate FET of the second conductivity type, having a back gate formed of the second well, and a bipolar transistor having a collector formed of the third island. The first island surrounds the first well which serves as back gate of the charge transfer device, and thus blocks the noise generated in the first well. Hence, the other islands are free from the influence of the noise.

REFERENCES:
patent: 4314857 (1982-02-01), Aitken
patent: 4484388 (1984-11-01), Iwasaki
patent: 4642877 (1987-02-01), Garner et al.
patent: 4646124 (1987-02-01), Zunino
patent: 4764482 (1988-08-01), Hsu
patent: 4859624 (1989-08-01), Goto
Electronics, Oct. 28, 1976, pp. 8E and 10E, "One process adapts CCD devices to MOS, bipolar peripheral circuits."

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