Method of making increased-density flash EPROM that utilizes a s

Details Method of making increased-density flash EPROM that utilizes a s Method of making increased-density flash EPROM that utilizes a s

1995-06-01

1996-12-31

Thomas, Tom

Fishing, trapping, and vermin destroying

437 48, 437 52, 437195, H01L 218247

Patent

active

055894127

ABSTRACT:
A series of self-aligned, intermediate strips of conductive material, which contact each of the drain regions in a corresponding number of columns of drain regions in a flash electrically programmable read-only-memory (EPROM), are formed as a thick layer of planarized polysilicon. By utilizing intermediate strips of conductive material which are formed from a thick layer of polysilicon, the formation of cracks or voids in the intermediate strips of conductive material can be eliminated.

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Y. S. Hisamune et al., "A 3.6 Micron2 Memory Cell Structure for 16Mb EPROMs," International Electron Devices Meeting (Dec. 1989), pp. 583-586.

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