Method and apparatus for electron beam lithography

Details Method and apparatus for electron beam lithography Method and apparatus for electron beam lithography

1993-11-17

1995-11-21

Beyer, James

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

25049222, 2504911, 250397, H01J 3704

Patent

active

054689694

ABSTRACT:
Electron beam lithography for exposure of a group of elemental openings in a collective-exposure shaping diaphragm is intended to correct the positional deviation of the group of elemental openings quickly and economically.
A rectangular beam is formed by rectangle openings made in a rectangle forming diaphragm and a group of elemental openings in a collective-exposure shaping diaphragm and used for irradiating a reference mark on a workpiece stand. Electrons reflected from the reference mark are detected by a reflecting electron detector to calculate errors in the configuration and position of the rectangular beam. The results of calculation are fed back to a shaping deflector and a positioning deflector to correct errors in the configuration and position of the rectangular beam, respectively. Moreover, an arrangement of the groups of elemental openings is detected by mechanically scanning the collective-exposure shaping diaphragm so as to correct an error in the rotation of the collective-exposure shaping diaphragm.

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patent: 5298761 (1994-03-01), Aoki et al.
patent: 5301124 (1994-04-01), Chan et al.

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