Method of manufacturing semiconductor device using the abrasive

Details Method of manufacturing semiconductor device using the abrasive Method of manufacturing semiconductor device using the abrasive

1994-12-13

1995-11-21

Hearn, Brian F.

Fishing, trapping, and vermin destroying

437225, 437240, 1566451, H01L 21463

Patent

active

054686822

ABSTRACT:
Disclosed herein is abrasives consisting of fine particles of fluorinated silicon oxide which do not contain alkali metal and methods of thier manufacture, and high yield and high reliability methods of manufacturing semiconductor devices by the use of these abrasives. The abrasive comprises a solution in which fine particles of fluorinated silicon oxide are dispersed is formed by addition of boric acid to an aqueous solution of hydrosilicofluoric acid or addition of pure water to an alcohol solution of alkoxyfluorosilane. By the use of these abrasives, a layer insulating film for multi-layer wiring can be flattened.

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William J. Patrick et al., "Application of Chemical Mechanical . . . of VLSI Circuit Interconnections", J. Electrochem. Soc., vol. 138, No. 6, Jun. 1991, pp. 1778-1784.

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