Avalanche diode incorporated in a bipolar integrated circuit

Details Avalanche diode incorporated in a bipolar integrated circuit Avalanche diode incorporated in a bipolar integrated circuit

1995-03-28

1995-11-21

Ngo, Ngan V.

Fishing, trapping, and vermin destroying

437904, 437918, 257577, 257603, 257605, 257606, 257653, H01L 2972, H01L 2990

Patent

active

054686733

ABSTRACT:
A reference diode is formed in an N-type insulated well. An avalanche diode includes a P-type deep region having a high doping level, beneath which is formed an N-type overlapping buried layer, a P-type deep diffused region contacting a central portion of the deep region, a second, P-type, deep diffused region contacting the periphery of the deep region, an N-type highly doped surface region coating the surface of the first deep diffused region and forming therewith an avalanche junction. At least another structure identical to the avalanche diode structure, without the N-type surface region, forms a resistor between its electrodes.

REFERENCES:
patent: 4651178 (1987-03-01), Avery
patent: 4683483 (1987-07-01), Burnham et al.
patent: 4742021 (1988-05-01), Burnham et al.
patent: 4979001 (1990-12-01), Alter
patent: 5414295 (1995-05-01), Le Roux et al.
Patent Abstracts Of Japan, vol. 010, No. 019, Publication No. JP60171515, May 9, 1985.

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