Method of manufacturing an insulated gate bipolar transistor

Details Method of manufacturing an insulated gate bipolar transistor Method of manufacturing an insulated gate bipolar transistor

1991-07-22

1995-11-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 31, 437 59, H01L 29739

Patent

active

054686547

ABSTRACT:
A base layer is formed as first and second base layers through two steps, so that only an upper base layer (second base layer) can be easily set in high impurity concentration dissimilarly to conventional one. As the result, a JFET effect can be suppressed. Further, first and second well regions are formed for the first and second base layer, respectively, to be coupled with each other to form a single well region, so that a lower well region (first well region) can be easily set higher in impurity concentration than an upper well region (second well region). As the result, a latch-up phenomenon can be prevented.

REFERENCES:
patent: 3955269 (1976-05-01), Magdo et al.
patent: 4477310 (1984-10-01), Park et al.
patent: 4587713 (1986-05-01), Goodman et al.
patent: 4622573 (1986-11-01), Bakeman et al.
patent: 4637125 (1987-01-01), Iwasaki et al.
patent: 4684413 (1987-08-01), Goodman et al.
patent: 4684971 (1987-08-01), Payne
patent: 4803532 (1989-02-01), Mihara
patent: 4821095 (1989-04-01), Temple
patent: 4862233 (1989-08-01), Matsushita et al.
IEDM Transactions 1984, pp. 274-277.
"Insulated Gate Transistor Modeling and Optimization", IEDM 84, 10.5, pp. 274-277 (1984).
"Improved COMFETS with Fast Switching Speed and High-Current Capability", IEDM 83, 4.3, pp. 79-82 (1983).
"The Insulated Gate Transistor: A New Three-Terminal MOS-Controlled Bipolar Power Device", IEEE Transactions on Electron Devices, vol. ED-31, No. 6, Jun. 1984, pp. 821-828.

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