Process for making BiCMOS device having an SOI substrate

Details Process for making BiCMOS device having an SOI substrate Process for making BiCMOS device having an SOI substrate

1992-12-18

1994-01-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 21, 437 59, 437 62, 148DIG9, H01L 21265

Patent

active

052799786

ABSTRACT:
A BiCMOS device and process are disclosed wherein the transistors components are fabricated on an SOI substrate. A SIMOX process is used to form a buried oxide layer in a single crystal silicon substrate followed by an epitaxial deposition to form a silicon body of varying thickness overlying the buried oxide layer. MOS transistors are then formed in a thin portion of the epitaxial layer and a vertical bipolar transistor is formed in the thick portion of the epitaxial layer.
In accordance with one embodiment of the invention, a single crystal semiconductor substrate is provided having a principal surface and a buried oxide layer underlying the first surface. A lightly doped epitaxial layer of a first conductivity type having a thin MOS region and a thick bipolar region overlies the principal surface. A first and second isolation regions extending from the first surface to the buried oxide layer separate and electrically insulate the bipolar region from the MOS region. An NMOS and a PMOS transistor are formed in the thin MOS region and are separated by a third isolation region extending from the first surface to the buried oxide layer. A vertical bipolar is formed in the electrically insulated bipolar region of the epitaxial layer.

REFERENCES:
patent: 4908328 (1990-03-01), Hu et al.
patent: 4931407 (1990-06-01), Maeda et al.
patent: 4951102 (1990-08-01), Beitman et al.
patent: 4962051 (1990-10-01), Liaw
patent: 4975126 (1990-12-01), Margail et al.
patent: 5013681 (1991-05-01), Godbey et al.
patent: 5196355 (1993-03-01), Wittkower

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