Chemistry of inorganic compounds – Phosphorus or compound thereof – Oxygen containing
Patent
1993-09-22
1995-05-02
Bos, Steven
Chemistry of inorganic compounds
Phosphorus or compound thereof
Oxygen containing
423602, 117 2, 117941, 117944, 117 71, C01B 2526, C01G 2802, C30B 3100
Patent
active
054117232
ABSTRACT:
A process is disclosed for treating a crystal of MTiOXO.sub.4 which has crystal structure deficiencies of M and O, wherein M is selected from the group consisting of K, Rb, Tl and NH.sub.4 and mixtures thereof and X is selected from the group consisting of P, As and mixtures thereof, which includes the step of heating said crystal in the presence of a mixture of MTiOXO.sub.4 and at least one inorganic compound of one or more monovalent cations selected from the group consisting of Rb+, K+, Cs+ and Ti+ (said inorganic compound(s) being selected to provide a source of vapor phase monovalent cation and being present in an amount sufficient to provide at least a 0.1 mole % excess of the monovalent cation in relation to the M in the MTiOXO.sub.4 in said mixture) at a temperature of from about 400.degree. C. to 950.degree. C. and a pressure of at least 14 psi, and in the presence of a gaseous source of oxygen for a time sufficient to decrease the optical damage susceptibility of said crystal.
REFERENCES:
patent: 3949323 (1976-04-01), Bierlein et al.
patent: 4231838 (1980-11-01), Gier
patent: 4640736 (1987-02-01), Holman
patent: 4761202 (1988-08-01), Bordui et al.
patent: 5015328 (1991-05-01), Fitzpatrick et al.
patent: 5066356 (1991-11-01), Ferretti et al.
patent: 5084206 (1992-01-01), Ballman et al.
Terashima, K. et al., Japanese Journal of Applied Physics, vol. 30, No. 3B, Mar. 1991, Tokyo, Japan, pp. L497-L499.
Lemeshko, V. V. et al, Ukr. Fiz. Zh. Russ. Ed. 31, No. 11, 1745-50, 1986.
Morris, P. A. et al, SPIE, The International Society for Optical Engineering, vol. 1561, Inorganic Crystals for Optics, Electro-Optics, and Frequency Conversion, 104-110, 1991.
Bordui, P. F. et al, Ferroelectrics, 115, 7-12, 1991.
Morris, P. A. et al, Mat. Res. Soc. Symp. Proc., vol. 152, pp. 95-101, 1989.
Morris, P. A. et al, Mat. Res. Soc. Symp. Proc., vol. 172, pp. 283-289, 1990.
Roelofs, M. G., J. Appl. Phys., 65(12), 4976-4982, 1989.
Ahmed, F., Applied Optics, 28(1), 119-122, 1989.
Jacco, J. C. et al, Optics Lett., 16(17), 1307-1309, 1991.
Bierlein, J. D. et al, J. Opt. Soc. Am., B/6(4), 622-633, 1989.
V. V. Lemeshko et al., Ukr. Fiz. Zh. Russ. Ed. 31, No. 11:1745-50 (1986) "The Electrochromic Effect in Potassium Titanate-Phosphate Crystals".
J. C. Jacco, Optic Letters, vol. 16, No. 17, 1307-1309 (1991) "Bulk-darkening threshold of flux-grown KTiOPO.sub.4 ".
P. A. Morris et al., Inorganic Crystals for Optics, Electro-Optics, and Frequency Conversion, 104-110 (1991).
J. D. Bierlein et al., J. Opt. Soc. Am. B/vol. 6, No. 4, 622-633 (1989) "Potassium titanylphosphate: properties and new applications".
F. Ahmed, Applied Optics, vol. 28, No. 1, 119-122 (1989) "Laser damage threshold of KTiOPO.sub.4 ".
P. A. Morris et al., Mat. Res. Soc. Symp. Proc., vol. 172, 283-289 (1990) "Proton Effects in KTiOPO.sub.4 ".
P. A. Morris et al., Mat. Res. Soc. Symp. Proc., vol. 152, 95-101 (1989) "Defects in KTiOPO.sub.4 ".
P. F. Bordui et al., Ferroelectrics, vol. 115, 7-12 (1991) "Curie Temperature Measurements on KTiOPO.sub.4 Single Crystals Grown by Flux and Hydrothermal Techniques".
M. G. Roelofs, J. Appl. Phys. 65 (12), 4976-4982 (1989) "Identification of Ti.sup.3+ in Potassium titanylphosphate and its possible role in laser damage"n.
Bos Steven
E. I. Du Pont de Nemours and Company
LandOfFree
Process for reducing the damage susceptibility in optical qualit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for reducing the damage susceptibility in optical qualit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for reducing the damage susceptibility in optical qualit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1135213