High power transistor having emitter pattern with symmetric lead

Details High power transistor having emitter pattern with symmetric lead High power transistor having emitter pattern with symmetric lead

1978-07-17

1980-11-25

James, Andrew J.

357 36, 357 55, H01L 2348, H01L 2944, H01L 2952

Patent

active

042361710

ABSTRACT:
A high power transistor is made on a square chip with an epitaxial base construction. A glass passivated groove surrounds the device and isolates the device from adjacent devices manufactured on the same wafer. The emitter and base are interdigitated in a symmetric pattern which has four symmetrically located square enlarged lead connection regions for receiving emitter connection wires. A square enlarged base connection region is formed at one side of the interdigitated pattern for reception of the base lead. The assembly is then mounted in a housing of a type conventionally used for high power thyristors.

REFERENCES:
patent: 3309585 (1967-03-01), Forrest
patent: 3316466 (1967-04-01), Husa et al.
patent: 3453503 (1969-07-01), Schulz et al.
patent: 3515952 (1970-06-01), Robinson
patent: 3619738 (1971-11-01), Otsuka
patent: 3821780 (1974-06-01), Harland et al.
patent: 3896486 (1975-07-01), Wright
patent: 3911473 (1975-10-01), Nienhuis
patent: 3922706 (1975-11-01), Kaiser
patent: 4032961 (1977-06-01), Balisa et al.
patent: 4136354 (1979-01-01), Dobkin
patent: 4162507 (1979-07-01), Fischer

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