Novel bipolar transistor with a dual-dielectric tunnel emitter

Details Novel bipolar transistor with a dual-dielectric tunnel emitter Novel bipolar transistor with a dual-dielectric tunnel emitter

1977-09-30

1978-12-26

Edlow, Martin H.

357 23, 357 52, 357 54, 357 34, H01L 4902

Patent

active

041319028

ABSTRACT:
A dual-dielectric emitter bipolar transistor device is disclosed. Two dielectric layers are deposited over the base region of a base-collector junction and are used to emulate an emitter of a conventional bipolar transistor. The transistor device obtained thereby provides for a compatible technology to easily incorporate bipolar transistors with CMOS, MNOS, and CCD structures. Preferably, the first of the two dielectric layers which is in contact with the base region is made from SiO.sub.2 and has a thickness of substantially less than 30A. The second of the two layers which sandwiches the first layer between itself and the base region may be made from a silicon-nitride compound, preferably having substantially equal proportions of silicon and nitrogen and a thickness dimension ranging from 50 to 500A. Means are provided for application of a bias voltage potential of such polarity to inject minority carriers into the base from the emitter across the emitter-base junction and also a sufficient reverse bias voltage potential across the base-collector junction. At suitably chosen forward biased voltage potentials applied across the dual-dielectric emitter junction, minority carriers are injected across the dielectric-semiconductor interface and into the base region. This minority carrier injection is attributed to a direct tunneling mechanism.

REFERENCES:
patent: 3060327 (1962-10-01), Dacey
patent: 3831185 (1974-08-01), Kroger et al.
patent: 3831186 (1974-08-01), Kroger
patent: 3979613 (1976-09-01), Kroger et al.
patent: 4042945 (1977-08-01), Lin et al.
Weinberg, Appl. Phys. Lett., vol. 27, No. 8, 15 Oct. 75, p. 437 et seq.
Weinberg, Appl. Phys. Lett., vol. 29, No. 9, 1 Nov. 76, p. 6 & 7 et seq.
Uchida et al., I.E.E.E. Trans. on Electron Devices, vol. C-D-24, No. 6, Jun. 77, p. 688 et seq.

Affiliated with

Also associated with

Rating

Novel bipolar transistor with a dual-dielectric tunnel emitter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Novel bipolar transistor with a dual-dielectric tunnel emitter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Novel bipolar transistor with a dual-dielectric tunnel emitter will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1131410