Beam lead dual parametric amplifier

Details Beam lead dual parametric amplifier Beam lead dual parametric amplifier

1977-11-30

1978-12-26

Rolinec, Rudolph V.

Amplifiers

Parametric amplifiers

Semiconductor type

330 56, H03F 704

Patent

active

041318587

ABSTRACT:
A parametric amplifier having a beam lead dual Schottky barrier diode fabricated on a single semiconductor chip across a waveguide cavity. Two anode leads are bonded to the adjacent waveguide walls for coupling to a pump source; and a common cathode lead is bonded to a signal circuit. Parasitic reactances are reduced by minimizing stray capacitance and beam lead series inductance.

REFERENCES:
patent: 3842360 (1974-10-01), Dickens
Calviello et al., "Proc. IEEE" Mar. 1971, pp. 419-420.
Dickens, "1972 G-MTT International Microwave Symposium," pp. 55-57.

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