Method of making electrostatic switches for integrated circuits

Details Method of making electrostatic switches for integrated circuits Method of making electrostatic switches for integrated circuits

1993-03-17

1995-05-02

Echols, P. W.

Metal working

Method of mechanical manufacture

Electrical device making

29829, 200181, H01H 1100

Patent

active

054107997

ABSTRACT:
The first electrical switch contact of an electrostatic switch is formed over a substrate. A layer of electrically insulating material is interposed between the first switch contact and the substrate where the substrate is a silicon substrate having active regions. In that case, contact holes are formed in the insulating layer where desired to form electrical contact between the first switch contact and an underlying active region. An electrically insulating layer is formed over the first switch contact. A second switch contact is formed over the electrically insulating layer in a position such that a middle portion of the second electrical contact overlies a middle portion of the first electrical contact. A void is then created between the middle portions of the two electrical contacts by removing a portion of the electrically insulating material there between. The switch is operable by applying an electrical potential between the electrical contacts such that the middle portion of at least one of the electrical contacts deflects toward the middle portion of the other whereby electrical contact is created between the two.

REFERENCES:
patent: 2927255 (1960-03-01), Diesel
patent: 3566457 (1971-03-01), Engler
patent: 3681134 (1972-08-01), Nathanson et al.
patent: 4320572 (1982-03-01), Brower et al.
patent: 4674180 (1987-06-01), Zavracky et al.
patent: 5121089 (1992-06-01), Larson
patent: 5258591 (1993-11-01), Buck

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