Semiconductor capacitor device with dual dielectric

Details Semiconductor capacitor device with dual dielectric Semiconductor capacitor device with dual dielectric

1988-09-21

1990-06-26

Jackson, Jr., Jerome

357 54, 357 236, H01L 2978, H01L 2702

Patent

active

049376500

ABSTRACT:
A semiconductor device having a large-capacitance capacitor in which an insulator film is formed underneath a film made of a material having a high dielectric constant, such as tantalum oxide, in such a manner that a portion of the insulator film underneath a defect region which is undesirably thin is thicker than other portions of the insulator film, thereby preventing occurrence of a failure in terms of dielectric strength and deterioration of the lifetime of the capacitor which would otherwise be caused by the existence of the defect region. Also disclosed is a process for producing such semiconductor device. Thus, it is possible to effectively prevent occurrence of problems which would otherwise be caused when a material having a high dielectric constant, such as tantalum oxide, is employed as a dielectric film of a capacitor, so that the reliability of a semiconductor having a large-capacitance capacitor is greatly improved.

REFERENCES:
patent: 4495219 (1985-01-01), Kato et al.
patent: 4589056 (1986-05-01), Stimmell
patent: 4636833 (1987-01-01), Nishioka

Affiliated with

Also associated with

Rating

Semiconductor capacitor device with dual dielectric does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor capacitor device with dual dielectric, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor capacitor device with dual dielectric will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1128964