Short channel MOSFET

Details Short channel MOSFET Short channel MOSFET

1986-02-19

1990-06-26

Larkins, William D.

357 237, H01L 2978

Patent

active

049376403

ABSTRACT:
A field effect transistor having operating characteristics based on the control and modulation of the punch through phenomenon. The channel region between the source and the drain regions is appropriately doped such that the source and drain depletion regions overlap when no potential is applied between source and drain. The overlapped region in the absence of a gate field has a potential barrier. A gate voltage modulates the barrier to below the kT/q parameter. The source-to-drain fields also modulate the barrier.

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