Process for forming glass-sealed multichip semiconductor devices

Details Process for forming glass-sealed multichip semiconductor devices Process for forming glass-sealed multichip semiconductor devices

1978-12-15

1980-11-25

Dean, R.

Metal treatment

Compositions

Heat treating

29580, 29588, 65 32, 65 36, 65 54, 65 59B, 148187, 156649, 156662, 357 38, 357 55, 357 56, 357 73, H01L 2156, H01L 2308

Patent

active

042356458

ABSTRACT:
The preferred embodiment of the invention comprises a glass sealed thyristor and a method for simultaneously constructing a plurality of thyristors and a common semiconductor wafer. The thyristor utilizes a body of semiconductor material with the cathode and base regions extending to one major surface and the anode region extending to the second major surface. A groove is etched in the first surface of the body of semiconductor material to expose the PN junction formed at the interface of the cathode emitter and cathode emitter base regions. A second groove is etched in the second major surface to expose the PN junction formed at the interface of the anode emitter region and the anode emitter base region. Ring shaped glass members are fused to the body of semiconductor material to form seals providing environmental protection for the PN junctions exposed by etching the grooves in the major surfaces of the body of semiconductor material. A plurality of thyristors can be simultaneously constructed on a common semiconductor wafer.

REFERENCES:
patent: 3241010 (1966-03-01), Eddleston
patent: 3271124 (1966-09-01), Clark
patent: 3446695 (1969-05-01), Janakirama-Rao
patent: 3506502 (1970-04-01), Nakamura
patent: 3591837 (1971-07-01), Boyer
patent: 3639975 (1972-02-01), Tefft
patent: 3806771 (1974-04-01), Petruzella
patent: 3821782 (1974-06-01), Hutson
patent: 4007476 (1977-02-01), Hutson
patent: 4046545 (1977-09-01), Sanford et al.
patent: 4080621 (1978-03-01), Funakawa et al.

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