RF sputtering apparatus having floating anode shield

Details RF sputtering apparatus having floating anode shield RF sputtering apparatus having floating anode shield

1977-12-30

1978-12-26

Mack, John H.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192D, C23C 1500

Patent

active

041315332

ABSTRACT:
Isolating the anode shield of RF sputtering apparatus from the ground potential reduces the grounded surfaces to which the plasma is exposed and thereby increases the impedance between the plasma and the grounded surfaces. This improvement increases the resputtering rate significantly before the operating point of instability in the system is reached.

REFERENCES:
patent: 3617459 (1971-11-01), Logan
patent: 3743587 (1973-07-01), Kennedy
patent: 3755123 (1973-08-01), Davidse et al.
patent: 3763031 (1973-10-01), Scow et al.
patent: 3860507 (1975-01-01), Vossen, Jr.
R. P. Auyang et al., "Power Network for Substrate," IBM Tech. Disc. Bull., vol. 14, p. 1032 (1971).
J. S. Logan, "Control of RF Sputtered Film Properties Through Substrate Tuning," IBM J. Res. Dev., pp. 172-175 (1970).

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