Repair circuit of a flash memory cell and repair method

Details Repair circuit of a flash memory cell and repair method Repair circuit of a flash memory cell and repair method

1996-09-26

1999-08-10

Chung, Phung M.

Excavating

371 211, G06F 1100

Patent

active

059369701

ABSTRACT:
The present invention relates to a repair circuit of a flash memory cell and repair method and has excellent effects in that it can reduce the power consumption by detecting the power supply applied to the chip, latching the repaired address stored in the fuse block after the chip itself sequentially reads the fuse block, comparing the latched address with the input repair address to access the main cell and repair cell, consuming the power only while the chip reads the fuse block, and using the latched repair address at other operation, and it can reduce the area of the chip by constructing into a cell array the cells to which the repair address is to be stored and using the sense amplifier commonly.

REFERENCES:
patent: 5457650 (1995-10-01), Sugiura et al.

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