Semiconductor non-volatile memory device having floating gate ty

Details Semiconductor non-volatile memory device having floating gate ty Semiconductor non-volatile memory device having floating gate ty

1998-07-07

1999-08-10

Mai, Son

Static information storage and retrieval

Floating gate

Particular biasing

36518521, G11C 1606

Patent

active

059368888

ABSTRACT:
An electrically erasable and programmable read only memory device supplies first current from a precharging circuit through a first input node of a sense amplifier to a selected bit line to see whether a selected floating gate type field effect transistor passes the first current or block the first current, and a reference voltage generator supplies reference voltage to a second input node of the sense amplifier so as to produce a potential difference between the first input node and the second input node; the reference voltage generator supplies second current from a dummy precharging circuit through the second input node and a reference floating gate type field effect transistor to a ground line so as to produce the reference voltage at the second input node; and the reference floating gate type field effect transistor has an interconnection between the floating gate electrode and the control gate electrode so as to prevent the floating gate electrode from accumulation of electron.

REFERENCES:
patent: 5157626 (1992-10-01), Watanabe
patent: 5253201 (1993-10-01), Atsumi et al.
patent: 5381374 (1995-01-01), Shiraishi et al.
patent: 5659503 (1997-08-01), Sudo et al.
patent: 5757697 (1998-05-01), Briner
patent: 5841719 (1998-11-01), Hirata
patent: 5859796 (1999-01-01), Cleveland

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