Plasma doping process and apparatus therefor

Details Plasma doping process and apparatus therefor Plasma doping process and apparatus therefor

1988-08-04

1990-06-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437172, 427 38, 427 39, H01L 2176

Patent

active

049372050

ABSTRACT:
In a plasma doping process utilizing a radio frequency discharging in a vacuum by for doping an impurity into a semiconductor substrate, the radio frequency discharging is made intermittently and under controlling of average current of the discharging, thereby the impurity concentration is desirably controlled; and especially by selecting the vacuum in a range between 1.times.10.sup.-4 -5.times.10.sup.-2 torr, undesirable deposition of the impurity on the substrate surface is evadable.

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