Surface acoustic wave device, substrate therefor, and method of

Details Surface acoustic wave device, substrate therefor, and method of Surface acoustic wave device, substrate therefor, and method of

1997-09-24

1999-08-10

Dougherty, Thomas M.

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

310313A, 310313R, H01L 4108

Patent

active

059363290

ABSTRACT:
A sapphire single crystal wafer 11 having a diameter not less than two inches and having an off-angled surface which is obtained by rotating an R a CVD apparatus, and a double-layer structure of first and second aluminum single crystal layers 12 and 13 is deposited on the off-angled surface of the sapphire single crystal wafer by MOCVD. The thus deposited aluminum single crystal layer 13 has (1-210) surface. The first aluminum nitride single crystal layer 12 serves as a buffer layer and has a thickness of 5-50 nm, and the second aluminum nitride single crystal layer 13 has a thickness not less than 1 .mu.m. The off-angle is preferably set to a value not less than .+-.1.degree., much preferably a value .+-.2.degree., more preferably a value not less than -3.degree., and particularly preferable to a value within a range from -2.degree.-+10.degree.. The thus obtained aluminum nitride single crystal layer 12, 13 has no clack formed therein, has an excellent piezo-electric property, and has a high propagating velocity for surface acoustic wave.

REFERENCES:
patent: 4354130 (1982-10-01), Ono et al.
patent: 4868444 (1989-09-01), Shibata et al.
patent: 5498920 (1996-03-01), Okano et al.

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