Programmable semiconductor element having an antifuse structure

Details Programmable semiconductor element having an antifuse structure Programmable semiconductor element having an antifuse structure

1997-03-24

1999-08-10

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 50, 438600, 365 96, H01L 2900

Patent

active

059362979

ABSTRACT:
A programmable semiconductor element having an antifuse structure is disclosed. A first insulation film is formed on a silicon substrate. First and second conductors are formed on the first insulation film. The first and second conductors are spaced apart at a contact hole region. A second insulation film is formed on the first insulation film and the first and second conductors. The second insulation film includes a contact hole at a portion corresponding to the contact hole region. The second insulation film includes a recess adjacent to the contact hole. A conductor link is formed in the recess in the second insulation film. A third insulation film is formed over the conductor link.

REFERENCES:
patent: 4751197 (1988-06-01), Wills
patent: 4853758 (1989-08-01), Fischer
patent: 5019878 (1991-05-01), Yang et al.
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5365105 (1994-11-01), Liu et al.
patent: 5416355 (1995-05-01), Kudoh
patent: 5550404 (1996-08-01), Yen et al.
patent: 5552627 (1996-09-01), McCollum et al.
patent: 5585662 (1996-12-01), Ogawa
patent: 5625219 (1997-04-01), Takagi

Affiliated with

Also associated with

Rating

Programmable semiconductor element having an antifuse structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Programmable semiconductor element having an antifuse structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programmable semiconductor element having an antifuse structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1122579