Thyristor with a self-protection function for breakover turn-on

Details Thyristor with a self-protection function for breakover turn-on Thyristor with a self-protection function for breakover turn-on

1983-05-13

1987-02-24

Larkins, William D.

357 64, H01L 2974, H01L 29167

Patent

active

046461213

ABSTRACT:
A thyristor is comprised of a main thyristor region, a gate region for causing the main thyristor region to be turned on in response to a gate signal, and an amplifying gate region which is turned on to permit the main thyristor region to be turned on when an overvoltage is supplied to the thyristor in the absence of gate signal at the gate portion. The amplifying gate region is provided in a region except an intermediate region between the gate portion and the end of the main thyristor region facing the gate portion. A minority carrier lifetime in the amplifying gate region is longer than that of the main thyristor region and the gate portion.

REFERENCES:
patent: 3349299 (1967-10-01), Herlet
patent: 4079403 (1978-03-01), Temple
patent: 4165517 (1979-08-01), Temple et al.
patent: 4214254 (1980-07-01), Kimura et al.
patent: 4240091 (1980-12-01), Yatsuo et al.
Temple et al, "High-Power Dual Amplifying Gate Light Triggered Thyristors", IEEE Trans. on Electron Devices, vol. ED-23, No. 8, Aug. 1976, pp. 893-898.
International Electron Devices Meeting Technical Digest, p. 410; J. X. Przybsz et al; 1981.

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