Patent
1986-02-28
1987-08-18
Wise, Robert E.
H01L 2714, H01L 3100
Patent
active
046880682
ABSTRACT:
A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.
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Panish; Molecular Beam Epitaxy; Science; vol. 208; May 23, 1980; pp. 916-. 2
Chaffin Roger J.
Osbourn Gordon C.
Hightower Judson R.
Libman George H.
The United States of America as represented by the Department of
Wise Robert E.
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