Method for fabricating a semiconductor memory device having stor

Details Method for fabricating a semiconductor memory device having stor Method for fabricating a semiconductor memory device having stor

1993-10-05

1994-09-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

053468473

ABSTRACT:
The invention relates to a semiconductor memory device in which a bit line ring which functions as a bit line is formed at the upper and lower stage of the bit line and a storage node is formed to be overlapped in the same direction with said bit line formed perpendicularly to a word line to improve the integration degree.
Therefore, a capacitor area can be increased without an increase of an area of the unit cell to improve the integration degree of a semiconductor memory device and the generation of the bent portion of the active region can be avoided to decrease the distortion.

REFERENCES:
patent: 4864375 (1989-09-01), Teng et al.
patent: 5111275 (1992-05-01), Sawada et al.
patent: 5219780 (1993-06-01), Jun
patent: 5229314 (1993-07-01), Okudaiva et al.

Affiliated with

Also associated with

Rating

Method for fabricating a semiconductor memory device having stor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a semiconductor memory device having stor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a semiconductor memory device having stor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1120028