Process for forming low resistance contacts between silicide are

Details Process for forming low resistance contacts between silicide are Process for forming low resistance contacts between silicide are

1993-08-17

1994-09-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437200, 437201, 437193, 437 52, H01L 21283, H01L 21223

Patent

active

053468368

ABSTRACT:
A process for forming low resistance contacts between silicide areas and upper level polysilicon interconnect layers including a specific doping technique that provides solid low resistance contacts between a lower level of a silicided area and an upper level polysilicon interconnect. The doping technique combines a doping implant of the upper level polysilicon and an ion-mixing implant into a single implant thereby achieving a low resistive implant which also reduces processing steps.

REFERENCES:
patent: 3653120 (1972-04-01), Sirrine et al.
patent: 4128670 (1978-12-01), Gaensslen
patent: 4978637 (1990-12-01), Liou et al.
patent: 5003375 (1991-03-01), Ichikawa
patent: 5013686 (1991-05-01), Choi et al.

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