Process for depositing chrome doped epitaxial layers of gallium

Details Process for depositing chrome doped epitaxial layers of gallium Process for depositing chrome doped epitaxial layers of gallium

1979-02-16

1980-05-27

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 148174, 156605, 156612, 252 623GA, 357 15, 357 22, 357 23, 357 58, 357 63, 357 64, 427 85, H01L 21205, H01L 2184

Patent

active

042048931

ABSTRACT:
A method for reliably producing epitaxial layers of chrome doped gallium arsenide having excellent physical and electrical characteristics is disclosed. The process relies on the use of a specific dopant source for supplying chromium containing entities through the composition used in chemical vapor deposition (CVD) of gallium arsenide. The dopant source is obtained by chemical vapor deposition of a chromium oxide. This dopant is then utilized in a CVD process by flowing a reactive gas such as AsCl.sub.3 over the precipitate to form volatile chromium containing compounds which are combined with a GaAs CVD composition. The insulating gallium arsenide layers thus obtained have excellent electrical properties, resistivities greater than 10.sup.3 ohm-cm and exhibit no discernible particle induced surface irregularities.

REFERENCES:
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patent: 3657615 (1972-04-01), Driver
patent: 3729341 (1973-04-01), Dietz et al.
patent: 3912546 (1975-10-01), Hunsperger et al.
patent: 4075651 (1978-02-01), James
Bass, S. J., "Device Quality Epitaxial Gallium Arsenide . . .", J. Crystal Growth, v. 31, 1975, pp. 172-178.
Thorsen et al., "Material and Device . . . Heteroepitaxial GaAs . . .", Solid-State Electronics, vol. 17, 1974, pp. 855-862.

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