Silicon resonant tunneling

Details Silicon resonant tunneling Silicon resonant tunneling

1993-10-29

1998-08-18

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 17, 257 22, 257 28, 257 30, H01L 2904, H01L 2988

Patent

active

057961190

ABSTRACT:
A resonant tunneling diode (400) made of a silicon quantum well (406) with silicon oxide tunneling barriers (404, 408). The tunneling barriers have openings (430) of size smaller than the electron wave packet spread to insure crystal alignment through the diode without affecting the tunneling barrier height.

REFERENCES:
patent: 5216262 (1993-06-01), Tsu
patent: 5229623 (1993-07-01), Tanoue
patent: 5234848 (1993-08-01), Seabough
patent: 5336904 (1994-08-01), Kusunoki
Canham, Appl. Phys. Lett. (10), 3 Sep. 1990 pp. 1046-1048 "Silicon Quantum Voice . . . Wafers".

Affiliated with

Also associated with

Rating

Silicon resonant tunneling does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon resonant tunneling, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon resonant tunneling will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1116722