Electronic device fabrication apparatus

Details Electronic device fabrication apparatus Electronic device fabrication apparatus

1998-06-23

1999-08-10

Breneman, Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156345, 31511151, 117 50, 117 92, 117103, 117108, 118723R, 216 67, 427446, 427488, 427533, C23C 1600, C23C 1622

Patent

active

059353740

ABSTRACT:
An electronic device fabrication apparatus a reaction chamber; a cathode electrode and an anode electrode opposed to each other in the reaction chamber; a gas introduction pipe introduced into the reaction chamber for supplying reaction gas into the reaction chamber, the gas introduction pipe being electrically connected to the cathode electrode; and a high frequency power generation device for applying high frequency lower having a high exciting frequency which is included in one of a VHF band and a UHF band to the cathode electrode through the gas introduction pipe for exciting the reaction gas into a plasma state. The gas introduction pipe includes an impedance adjusting device for adjusting an impedance of the gas introduction pipe.

REFERENCES:
patent: 5147493 (1992-09-01), Nishmura et al.
patent: 5325021 (1994-06-01), Duckworth et al.
Howling et al., "Frequency Effects in Silane Plasmas for Plasma Enhanced Chemical Vapor Deposition", J. Vac. Sci. Technol. A 10(4), Jul./Aug. 1992, pp. 1080-1085.
Kitamura et al., A Computational Investiagation of the RF Plasma Structures and their Production Efficiency in the Frequency Range from HF to VHF, Plasma Sources Sci. Technol. 2(1993), pp. 40-45.
Oda, "Frequency Effects in Processing Plasmas of the VHF Band", Plasma Sources Sci. Technol. 2 (1993), pp. 26-29.
J.P. Rayner, A.D Cheetham, G.N. French, J. Vac Sci. Technol. A 14(4), Jul/Aug. 1996.
A.V. Fedotov, R.L. Gluckstern, Physical Review E, Aug. 1996, 54, 2, pp. 1930-1939.

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