Method for manufacturing semiconductor device having groove-type

Details Method for manufacturing semiconductor device having groove-type Method for manufacturing semiconductor device having groove-type

1996-03-04

1998-08-18

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438701, H01L 2176

Patent

active

057958149

ABSTRACT:
In a method for forming a groove-type isolation area, an insulating pattern is formed by a selective oxidation process or a LOCOS process on a semiconductor substrate. The semiconductor substrate is etched with a mask of the insulating pattern to create a groove in the semiconductor substrate. An insulating layer is buried in the groove to form the groove-type isolation area.

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Wolf, Stanley Silicon Processing For The VLSI Era, vol. 1, pp. 532-534 (1986).
Wolf, Stanley Silicon Processing For The VLSI Era, vol. 2 pp. 32-33 (1990).

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