Photolithography mask and method of fabrication

Details Photolithography mask and method of fabrication Photolithography mask and method of fabrication

1996-04-05

1998-08-18

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430314, G03F 900

Patent

active

057956847

ABSTRACT:
A novel mask for photolithography in semiconductor processing and fabrication method is disclosed. The mask includes a layer of transmissive material transparent to the wavelength of light to be used deposited thereon. The transmissive material is plasma etched in accordance with a pattern in photoresist deposited thereon to create trench portions in the transmissive material. A layer of absorbing material absorptive to the wavelength of light to be used is deposited within the trench portions. The surface of the mask is then planarized to create a substantially smooth mask layer having trench portions in the transmissive material and absorbing layer portions within the trench portions. If desired, a second layer of transmissive material can be deposited over the smooth mask layer to provide a protective cap to create an overall smooth, flat completed mask surface. The mask is useful for transmissive photolithography applications as well as reflective photolithography applications.

REFERENCES:
patent: 5437947 (1995-08-01), Hur et al.
patent: 5480747 (1996-01-01), Vasudev

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