Process for fabricating ohmic contact

Details Process for fabricating ohmic contact Process for fabricating ohmic contact

1994-05-13

1995-02-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437188, H01L 2144

Patent

active

053875494

ABSTRACT:
An ohmic electrode and a process for fabricating the same, said process comprising forming a first metallic layer comprising indium or an indium alloy on a compound semiconductor layer, forming a second metallic layer comprising a gold-germanium alloy on said first metallic layer, and subjecting the first and the second metallic layer thus obtained to alloying treatment. The present invention provides favorable ohmic contacts by effecting the alloying treatment at a relatively low temperature of 350.degree. C. or even lower.

REFERENCES:
patent: 4662060 (1987-05-01), Aina et al.
patent: 4794444 (1988-12-01), Liu et al.
A. Christov, SOlid Phase Formation in Au:Ge/Ni, Ag/Iu/Ni, In/AuiGe GaAs Ohomic Contact systems, solid-state electronics vol. 22 pp. 141-149.

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