Production method of a MESFET semiconductor device

Details Production method of a MESFET semiconductor device Production method of a MESFET semiconductor device

1993-11-16

1995-02-07

Quach, T. N.

Fishing, trapping, and vermin destroying

437 41, 437175, 437231, 437912, H01L 21338

Patent

active

053875290

ABSTRACT:
A particle beam irradiates a thermohardening resin and selectively hardens the thermohardening resin of the implanted region. The non-hardened resin not irradiated is removed with high selectivity and an inverted pattern of the hardened resin remains as a mask. Using the same photoresist mask employed in the irradiation for selective hardening, ion implantation through the hardened resin forms spaced apart implanted regions in the substrate. The removal of the photoresist and the non-hardened resin leaves an aperture for metal deposition to form Schottky barrier. Hardened resin from portions of spaced apart implanted regions is removed, followed by metal deposition forming source and drain electrodes to complete a MESFET. Spin-on-glass as the thermohardening resin is also disclosed.

REFERENCES:
patent: 4564583 (1986-01-01), Maeguchi
patent: 4731339 (1988-03-01), Ryan et al.
patent: 4839310 (1989-06-01), Hollis et al.
patent: 4929567 (1990-05-01), Park et al.
patent: 4992387 (1991-02-01), Tamura
patent: 5006478 (1991-04-01), Kobayashi et al.
patent: 5037767 (1991-08-01), Daniel
patent: 5053348 (1991-10-01), Mishra et al.
patent: 5105242 (1992-04-01), Fujihira et al.
patent: 5204278 (1993-04-01), Imamura et al.
Wolf et al, "Silicon Processing For The VLSI ERA", Lattice Press, 1989, pp. 308-327.
Hanyu et al, "Super Low-Noise HEMTs With A T-Shaped WSi.sub.x Gate" Electronics Letters, vol. 24, No. 21, 1988, pp. 1327-1328.
Nikkei Microdevices, 1989, pp. 91-95.
Yamasaki et al, "GaAs LSI-Directed MESFET's With Self-Aligned Implantation For n+-Layer Technology (SAINT)", IEEE Transactions on Electron Devices, vol. ED-29, No. 11, 1982, pp. 1772-1777.
Imai et al, "Novel Process For Direct Delineation of Spin On Glass (SOG)", Japanese Journal Of Applied Physics, vol. 29, No. 11, 1990, pp. 2653-2656.
Kubena et al, "Dot Lithography For Zero-Dimensional Quantum Wells Using Focused Ion Beams", Journal of Vacuum Science Technology, vol. B6, No. 1, 1988, pp. 353-356.
Briska et al, "Method Of Etching Fine Structures In Silicon", IBM Technical Disclosure Bulletin, vol. 22, No. 3, 1979.
Abdel-Motaleb et al, A Simple Self-Aligned GaAs MESFET Using Polyimide, Solid-State Electronics, vol. 30, No. 4, 1987, pp. 361-363.
Bartle et al, "Selective Area Ion Implantation For Gallium Arsenide Microwave Devices And Circuits", G. E. C. Journal of Research, vol. 1, No. 3, 1983, pp. 174-177.
Nagahama et al, "A High Electron Mobility Transistor With A Mushroom Gate Fabricated By Focused Ion Beam Lithography", IEEE MTT International Microwave Symposium Digest, 1988, pp. 251-253.
Komuro et al., "Ion Beam Exposure of Resist Materials", J. Electrochem. Soc., vol. 126, No. 3, Mar. 1979, pp. 483-490.

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