Nonvolatile semiconductor memory having an improved reference vo

Details Nonvolatile semiconductor memory having an improved reference vo Nonvolatile semiconductor memory having an improved reference vo

1996-06-28

1997-08-19

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518521, 36518907, 36518909, 365210, G11C 1134

Patent

active

056595034

ABSTRACT:
In a nonvolatile semiconductor memory, in addition to a first voltage generating circuit for supplying various voltages to memory cell transistors in various operations, there is provided a second voltage generating circuit for supplying various voltages to a dummy cell in a reference voltage generating circuit in the various operations. The second voltage generating circuit is configured to supply a dummy cell writing voltage to the dummy cell, one time only when the erase operation for the memory cell transistors has been carried out. Accordingly, with a very simple construction, the progress of the deterioration of the dummy cell and the memory cell transistor can be made close to each other, so that the working life of the nonvolatile semiconductor memory can be lengthened.

REFERENCES:
patent: 5157626 (1992-10-01), Watanabe
patent: 5268869 (1993-12-01), Ferris et al.
patent: 5303197 (1994-04-01), Miyashita

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