Method of making mask pattern data and process for manufacturing

Details Method of making mask pattern data and process for manufacturing Method of making mask pattern data and process for manufacturing

1996-07-11

1998-04-07

Chapman, Mark

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, G03F 900

Patent

active

057362777

ABSTRACT:
Pattern data of a phase shift mask can be inspected: (101) by separating and laying out pattern data of a phase shift mask in an actual pattern data layer, an auxiliary pattern data layer and a phase shift pattern data layer; (102) by inspecting and correcting only the data of the actual pattern of the actual pattern data layer; (103) by making data of an estimated pattern estimated to be transferred to a semiconductor wafer from the data of the synthetic data of the correct actual pattern data, the auxiliary pattern data and the phase shift pattern data, which are inspected and corrected; and (104) by comparing the estimated pattern data and the actual pattern data to inspect the data of the auxiliary pattern and the phase shift pattern.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
patent: 5458998 (1995-10-01), Takekuma et al.
A.R. Neureuther; "Modeling Phase Shifting Masks;" BACUS Symposium Paper; Sep. 26, 1990.
Hirai, et al. "Extended Absracts", 38th Spring Mtg. 1991, The Japan Society of Applied Physics and Related Societies.
Maber, et al. Publishey: Katsuhisa Morita, Tokyo "Introduction to MOS LSI Design", pp. 212-214; Apr., 1984.
Morisue, "LSI Design & Fabrication Technique"; Sep., 1987, Tokyo pp. 162-167.
Ong. "Modern MOS Technology: Processes, Devices and Designs", pp. 317-331, 1986, New York.

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