Dynamic ram cell having shared trench storage capacitor with sid

Details Dynamic ram cell having shared trench storage capacitor with sid Dynamic ram cell having shared trench storage capacitor with sid

1986-10-17

1988-11-15

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 55, 357 65, 357 68, 365149, H01L 2978

Patent

active

047853379

ABSTRACT:
A one-device shared trench memory cell, in which the polysilicon and dielectric layers within the trench extend above the surface of the trench to form a mandrel structure. A layer of polysilicon is conformably deposited on the mandrel structure. Dopant ions are diffused from the doped polysilicon within the trench to the conformal polysilicon layer, and from the conformal polysilicon layer, and from the conformal polysilicon layer to a portion of the substrate disposed thereunder. The conformal polysilicon is etched in a solvent that preferentially attacks undoped polysilicon, to provide and is a bridge contact that is self-aligned to the polysilicon within the trench and to the diffusion region. A plurality of FETs formed on either side of the trench, by use of a sidewall-defined gate electrode to maximize density. The cell produces a "poly-to-poly" and "poly-to-substrate" storage capacitor combination that maximizes charge storage capability.

REFERENCES:
patent: Re32090 (1986-03-01), Jaccodine et al.
patent: 3387286 (1968-06-01), Dennard
patent: 4256514 (1981-03-01), Pagge
patent: 4322883 (1982-04-01), Abbas et al.
patent: 4329704 (1982-05-01), Sakurai et al.
patent: 4369564 (1983-01-01), Hiltpold
patent: 4378627 (1983-04-01), Jambotkar
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4688063 (1987-08-01), Lu
IBM Technical Disclosure Bulletin, vol. 29, #3, pp. 1421-1422, Aug. 1986.
G. V. Clarke, "Capacitor for Single FET Memory Cell," Feb. 75, vol. 17, No. 9, IBM Technical Disclosure Bulletin, pp. 2579-2580.
R. C. Dockerty, "High-Capacitance, One-Device Memory Cell," Jul. 76, vol. 19, No. 2, IBM Technial Disclosure Bulletin, p. 506.
S. Nakajima et al., "An Isolation-Merged Vertical Capacitor Cell for Large Capacity DRAM," pp. 240-243, IEDM 1984.
T. Furuyama et al., "A Vertical Capacitor Cell for ULSI DRAM's," VLSI, 9/10/84.

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