Primary particle beam irradiation apparatus and method of irradi

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250397, 250398, H01J 37304

Patent

active

047851880

ABSTRACT:
A primary particle beam irradiation apparatus comprising a stage on which a target is placed; a device for irradiating a predetermined scan region on the stage with a primary particle beam; a secondary ion sensor for detecting a secondary ion, generated by an irradiation of the primary particle beam, from the stage or the target; and a device, connected to the irradiating device and the secondary ion sensor, for controlling the irradiating means on the basis of an output signal from the secondary ion sensor.
Further, a method for irradation of a primary particle beam comprising the step of detecting the irradiation position of a primary particle beam scanned on a target over a predetermined width or predetermined region by using the output of a secondary ion sensor provided near the surface of the target; the step of correcting the deviation of the irradiation position based on the information of the irradiation position which is detected, and further scanning the primary particle beam to irradiate the surface of the target based on the information obtained at the correction step.

REFERENCES:
patent: 3585397 (1971-06-01), Brewer
patent: 4503329 (1985-03-01), Yamaguchi et al.

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