Process for manufacturing a semiconductor device having MIS-type

Details Process for manufacturing a semiconductor device having MIS-type Process for manufacturing a semiconductor device having MIS-type

1987-07-20

1988-11-15

Roy, Upendra

Fishing, trapping, and vermin destroying

357 234, 357 91, 437 26, 437 29, 437 34, 437 56, H01L 21265, B01J 1700

Patent

active

047849681

ABSTRACT:
Disclosed herein is a MOS-type field-effect transistor in which a semiconductor region having the same type of conductivity as the substrate and an impurity concentration higher than that of the substrate is formed under the channel so as to come at both ends thereof into contact with the source and drain regions. The semiconductor region restricts the extension of depletion layer from the source and drain regions, and restricts the short-channel effect. The junction capacity is small between the semiconductor region and the source and drain regions.

REFERENCES:
patent: 4212683 (1980-07-01), Jones
patent: 4247860 (1981-01-01), Tihanyi
patent: 4277882 (1981-07-01), Crossley
patent: 4466175 (1984-08-01), Coe
patent: 4472871 (1984-09-01), Green et al.
patent: 4499652 (1985-02-01), Shrivastava
patent: 4502205 (1985-03-01), Yahano
patent: 4514893 (1985-05-01), Kinsbron et al.

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