Method of fabricating semiconductor thin film and a Hall-effect

Details Method of fabricating semiconductor thin film and a Hall-effect Method of fabricating semiconductor thin film and a Hall-effect

1994-05-23

1995-01-31

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437126, 437129, 437133, 437184, H01L 2120

Patent

active

053858646

ABSTRACT:
A method of fabricating a semiconductor thin film is initiated with preparing a substrate having a surface consisting of a single crystal of Si. The surface has an oxide film. Then, the oxide film is removed. The dangling bonds of the Si atoms on the surface are terminated with hydrogen atoms. An initial layer is formed on the substrate of the single crystal of Si terminated with the hydrogen atoms, of at least one selected from the group consisting of Al, Ga, and In. A buffer layer containing at least In and Sb is formed on the initial layer. A semiconductor thin film containing at least In and Sb is formed on the buffer layer at a temperature higher than the temperature at which the buffer layer is started to be formed. There is also disclosed a method of fabricating a Hall-effect device. This method is initiated with forming a semiconductor thin film by making use of the above-described fabrication method. Then, electrodes are attached to the thin film.

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