Method of fabricating a metal oxide semiconductor heterojunction

Details Method of fabricating a metal oxide semiconductor heterojunction Method of fabricating a metal oxide semiconductor heterojunction

1992-12-02

1995-01-31

Fourson, George

Fishing, trapping, and vermin destroying

437 67, 437203, 437915, 257330, 257332, H01L 21265

Patent

active

053858530

ABSTRACT:
Method of fabricating a vertical Metal Oxide Semiconductor Heterojunction Field Effect Transistor (MOSHFET) which is in a layered wafer made by successively growing an N.sup.+ silicon layer, and a N.sup.- silicon layer, a P.sup.- Si.sub.1-x Gex layer, a P.sup.- Silicon layer and then, an N.sup.- silicon layer, one on top of the other. Trenches are etched through the top 3 layers to form islands that are the MOSHFETs heterojunction channel. A gate deposited or grown in a trench extends vertically from the drain at the bottom of the trench to the source in the layer near the top of the trench.

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